http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013126983-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7131aa3c309d1ad2651950d8dc2f456d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f26a9c2efad3ae086a108f3c04b57d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2011-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93d25754b258417c48926e0575a026da |
| publicationDate | 2013-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2013126983-A1 |
| titleOfInvention | Semiconductor Architecture Having Field-effect Transistors Especially Suitable for Analog Applications |
| abstract | An insulated-gate field-effect transistor ( 220 U) utilizes an empty-well region for achieving high performance. The concentration of the body dopant reaches a maximum at a subsurface location no more than 10 times deeper below the upper semiconductor surface than the depth of one of a pair of source/drain zones ( 262 and 264 ), decreases by at least a factor of 10 in moving from the subsurface location along a selected vertical line ( 136 U) through that source/drain zone to the upper semiconductor surface, and has a logarithm that decreases substantially monotonically and substantially inflectionlessly in moving from the subsurface location along the vertical line to that source/drain zone. Each source/drain zone has a main portion ( 262 M or 264 M) and a more lightly doped lateral extension ( 262 E or 264 E). Alternatively or additionally, a more heavily doped pocket portion ( 280 ) of the body material extends along one of the source/drain zones. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381457-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011615-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581215-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9780189-B2 |
| priorityDate | 2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.