| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_461514df460e0cdd5644e86ba60adbf7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1279
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2012-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_848babe821aa42497dc37155e9cd11c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fda5a36813a1281b1453dee2c62b35eb |
| publicationDate |
2013-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013125962-A1 |
| titleOfInvention |
Method for manufacturing light absorber layer of bismuth-doped ib-iiia-via compound and solar cell including the same |
| abstract |
A technique for enhancing the characterization of the light absorber layers and the solar cells employing the light absorber layers are provided. A method for preparing the light absorber layers includes that bismuth-doped IB-IIIA-VIA compounds are synthesized via heating Group IB, Group IIIA and bismuth compound in an atmosphere containing Group VIA species. Additionally, a technique for preparing a solar cell employing IB-IIIA-VIA compounds containing bismuth species, that are prepared via the aforementioned method and further applied to manufacture photovoltaic to materials, is also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10134970-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113644146-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3073535-A4 |
| priorityDate |
2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |