| abstract |
A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: n (1) providing a semiconductor substrate, n (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, n (3) firing the dried aluminum paste, and n (4) removing the fired aluminum paste with water, n wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition. |