http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013112140-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a416da301af6529e8ad52a5249e6445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2c5a705b02ca8c26c4d8262508a57a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_043a8aa6ac7231b8c9f26607f9711965 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02387 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 2012-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be6e4a3f94bda7e6d10f8526c9b58063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_812055641467b73229d21dbdb1fe2f57 |
| publicationDate | 2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2013112140-A1 |
| titleOfInvention | Apparatus for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reaction analysis |
| abstract | In certain desirable embodiments, the present invention relates to the use of 15 N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described. |
| priorityDate | 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.