| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31504 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2012-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4180027825e8e36fba1e32a3265e3a7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f535650879a04288bba864ee3279cf11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c03a05bd700193717ff1d8e0a58150ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_496d11ad9b916832fa4b6f19f6c49e3f |
| publicationDate |
2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013108788-A1 |
| titleOfInvention |
Vapor-phase process apparatus, vapor-phase process method, and substrate |
| abstract |
A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009148704-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10626500-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10221483-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8628616-B2 |
| priorityDate |
2007-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |