| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f6fd78098b31ec7dcb07700a06525794
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_148341f53255b54b3dd6e4bc4ef895c2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7781
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2012-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9210af3ec4ef877860b81fce22a10827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db1b5353bdebe5d93e3610c73e71c3e9 |
| publicationDate |
2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013105910-A1 |
| titleOfInvention |
Remote Doped High Performance Transistor Having Improved Subthreshold Characteristics |
| abstract |
Devices comprising, and a method for fabricating, a remote doped high performance transistor having improved subthreshold characteristics are disclosed. In one embodiment a field-effect transistor includes a channel layer configured to convey between from a source portion and a drain portion of the transistor when the transistor is in an active state. Further, the field-effect transistor includes a barrier layer adjacent to the channel layer. The barrier layer comprises a delta doped layer configured to provide carriers to the channel layer of the transistor, while preferably substantially retaining dopants in said delta-doped layer. |
| priorityDate |
2009-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |