http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013104800-A1

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filingDate 2012-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29d5c00825f2f580ae0b79cd66308762
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publicationDate 2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013104800-A1
titleOfInvention Film-forming method and film-forming apparatus
abstract A film-forming method and apparatus for performing vapor phase growth reaction avoiding a substrate becoming adhered to a substrate supporting portion, comprising: n placing a substrate on a substrate supporting portion in a film-forming chamber, supplying a source gas into the film-forming chamber while the substrate is rotating on a cylindrical portion for supporting the substrate supporting portion thereon, supplying a purge gas into the cylindrical portion and forming a film on the substrate while at least a part of the substrate is vibrating up and down on the substrate supporting portion by discharge of the purge gas from between the substrate and the substrate supporting portion. The vibration allowing the substrate to not become adhered to the substrate supporting portion, and thus increase throughput of the operation.
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