| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7c1adb3d2257c2e15e2fc8fd17f1218a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0fa01d89a953961a74e19defaac280fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_966c1e9dd548b1b1d2f53db26bb25363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e325b233025285a7031dbb1070858706 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28D5-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2011-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cc3f7fde598f1f61126019f9e9bcf23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6cd3166ae8f053f9e50f776f2e74b47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d38e39346ed22f191524820060d4df4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d897fc7191998a97fd99e584e434af44 |
| publicationDate |
2013-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013098439-A1 |
| titleOfInvention |
Silicon wafer, semiconductor device, method for producing silicon wafer, and method for producing semiconductor device |
| abstract |
A silicon wafer obtained by etching by not less than 5 μm and not more than 25 μm per surface on either side a surface of crystalline silicon obtained by cutting a silicon crystal ingot, the silicon wafer having a surface with a facet having a width of not less than 10 μm and not more than 150 μm, and a semiconductor device having an electrode at that surface, are provided. Furthermore, a method for producing the silicon wafer and a method for producing the semiconductor device that include the step of etching a surface of the crystalline silicon with an aqueous solution of sodium hydroxide having a sodium hydroxide concentration of not less than 20% by mass and not more than 35% by mass by not less than 5 μm and not more than 25 μm per surface on either side, are also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I650872-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11631779-B2 |
| priorityDate |
2010-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |