http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013084707-A1

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filingDate 2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f53cdfe2d5e36c7b2b9c44bfbaeafd75
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publicationDate 2013-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013084707-A1
titleOfInvention Dry cleaning method for recovering etch process condition
abstract A method of patterning a substrate is described. The method includes establishing a reference etch process condition for a plasma processing system. The method further includes transferring a mask pattern formed in a mask layer to one or more layers on a substrate using at least one plasma etching process in the plasma processing system to form a feature pattern in the one or more layers and, following the transferring, performing a multi-step dry cleaning process to substantially recover the reference etch condition. Furthermore, the multi-step dry cleaning process includes performing a first dry cleaning process step using plasma formed from a first dry clean process composition containing an oxygen-containing gas, and performing a second dry cleaning process step using plasma formed from a second dry clean process composition containing a halogen-containing gas.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150097416-A
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