http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013078787-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ef5249fd0c2a10274c0ab6ce1834922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e148e6603e103b7bfa6b584b3db0e98b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f60de303736333f4997dbba1932f201c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate | 2011-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea94580bf68841c69d747b6dc61a17f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04edf6e2a5b5b9ba13dbc0258e6fd787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8564acb92584c155c143743bad20cf53 |
| publicationDate | 2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2013078787-A1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | Disclosed is a method for manufacturing a semiconductor device, including the steps of: forming a first semiconductor film ( 2 ) and a second semiconductor film ( 4 ) over a glass substrate ( 6 ); forming a photosensitive resin over the glass substrate ( 6 ) to cover the first semiconductor film ( 2 ) and the second semiconductor film ( 4 ); conducting an exposure process in which controlled amounts of exposure radiation are projected to the photosensitive resin using a photomask; conducting a developing process on the photosensitive resin that was subjected to the exposure process, to form a first resist ( 40 ) over the first semiconductor film ( 2 ) and to form a second resist ( 41 ) over the second semiconductor film ( 4 ); implanting an n-type impurity into the first semiconductor film ( 2 ) using the first resist ( 40 ) and the second resist ( 41 ) as masks; and removing the first resist ( 40 ) and implanting a p-type impurity into the first semiconductor film ( 2 ) using the second resist ( 41 ) as a mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021217894-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9613984-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015214250-A1 |
| priorityDate | 2010-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.