| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2012-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_302f8b9c0dde5c917713d4172c1db8da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09b713f9450e69db8dcef221d11c5091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81baa54583262c1c201a84a6fe407b6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b9b2f3efe3ef2ecf658660788dd4817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bebde30b2331e772705106c311a0afa5 |
| publicationDate |
2013-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013071982-A1 |
| titleOfInvention |
Nonvolatile Memory Elements with Metal-Deficient Resistive-Switching Metal Oxides |
| abstract |
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076641-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014264825-A1 |
| priorityDate |
2007-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |