| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_814a3fbf638768ea7469bba1125741b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1774dbd4b9ce141f71bbe0f0a18abdc4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2012-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6f45fa59372258c0c6d94078e5450fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e24b0606ce0c3fc633ad17f2dcb4002d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4067f06cf0c15ef834c95a17ceeb2b23 |
| publicationDate |
2013-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013068293-A1 |
| titleOfInvention |
Substrate geometry for three dimensional photovoltaics fabrication |
| abstract |
A thin film photovoltaic device with back contacts is disclosed. The thin film photovoltaic device may comprise 1) a first contact disposed in a first layer and having an upper surface and a lower surface; 2) a first semiconductor disposed in a second layer and having a lower surface disposed on the upper surface of the first contact; 3) an insulator or second semiconductor disposed in a third layer and on an upper surface of the first semiconductor; 4) a second contact disposed in a fourth layer and on the insulator or second semiconductor; and 5) an absorber disposed in a fifth layer and about the second contact. The absorber may comprise a p-type or a n-type semiconductor and the first semiconductor may comprise the other of the p-type and n-type semiconductor. The second contact may be patterned. |
| priorityDate |
2011-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |