| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e79d32a005830961bcd2a8cd0b08d486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6cdef9e250a477af38200550c3e1d80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2012-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43e8fb9d0d40f945566f7487b4fbe9c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dd5c7a6452b3090cfb0fb0dd2af23b1 |
| publicationDate |
2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013065404-A1 |
| titleOfInvention |
Carbosilane Precursors For Low Temperature Film Deposition |
| abstract |
Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014302688-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804099-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I706049-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658172-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10679848-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646198-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741458-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957514-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404275-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011379-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343293-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9613798-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116408252-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11316056-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I707979-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10544506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741584-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107430992-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9401450-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9716205-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021017092-A1 |
| priorityDate |
2011-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |