| abstract |
A resist pattern forming method contains, in order: (1) a step of forming a resist film by using a negative chemical-amplification resist composition containing: (A) polymer compound having a repeating unit represented by the specific formula, (B) a phenolic compound being capable of crosslinking the polymer compound (A) by the action of an acid and having two or more benzene rings and four or more alkoxymethyl groups, and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (2) a step of exposing the film, and (4) a step of, after exposure, developing the film by using a developer containing an ester-based solvent having a carbon number of 7 or 8. |