| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_194f85b805e143073b5416ae3da2de43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_064b991969c368ca285575633938c4f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2453abbfde9d4be729daecb13c8ab5f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db53efd7847f41e7a610da920d66f320
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3369c11bcd08b807211291600c388ac2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79e94b6e3c1b567992b5cdac85bf3877 |
| publicationDate |
2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013044783-A1 |
| titleOfInvention |
Hole blocking layers in non-polar and semi-polar green light emitting devices |
| abstract |
Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017119369-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014188777-A1 |
| priorityDate |
2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |