| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c80782ff97d989e4e4818c3302e609c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fc4cc9350679695db13662f069e6071d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e392f06e687599286b396c5b7800bc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a53a9c0b2d9e07470d629ba1769d2ccd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b97824fec2e205f5af01e8f364adde90 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_810c62d3ca2392c7b493035b10cfe9e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ce70eb1d62699a90ec711b86842865a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f4cd14081594ef9a0129b261058ba5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98781952cfeea1799dd5d6caf86f9c47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdf4f4e2f77b5771f5d39a58097528c1 |
| publicationDate |
2013-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013037816-A1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device ( 130 ) includes: a bonding substrate ( 100 ); a thin film element ( 80 ) formed on the bonding substrate ( 100 ); and a semiconductor element ( 90 ) bonded to the bonding substrate ( 100 ), the semiconductor element ( 90 ) including semiconductor element main body ( 50 ) and a plurality of underlying layers ( 51 - 54 ) stacked on a side of the semiconductor element main body ( 50 ) facing the bonding substrate ( 100 ), and each of the underlying layers ( 51 - 54 ) including an insulating layer and a circuit pattern in the insulating layer, wherein an end of the semiconductor element ( 90 ) facing the thin film element ( 80 ) is provided in a stepped form so that the closer to the bonding substrate the underlying layers arc, the farther ends of the underlying layers facing the thin film element protrude, the end of the semiconductor element ( 90 ) is covered with a resin layer ( 120 ), and the thin film element ( 80 ) is connected to the semiconductor element main body ( 50 ) via a connection line ( 121 a ) provided on the resin layer ( 120 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11575067-B2 |
| priorityDate |
2010-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |