| abstract |
Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of forming metal chalcogenide nanoparticles is provided. The method includes the following steps. Water, a source of Zn, a source of Cu, optionally a source of Sn and at least one of a source of S and a source of Se are contacted under conditions sufficient to produce a dispersion of the metal chalcogenide nanoparticles having a Zn chalcogenide distributed within a surface layer thereof. The metal chalcogenide nanoparticles are separated from the dispersion and can subsequently be used to form an ink for deposition of kesterite films. |