A metal line 731 is formed in a linear area S of an insulative substrate 720 , and moreover a metal line 732 is formed generally parallel to the metal line 731 with a specified distance thereto. The metal line 731 is connected to an n-type semiconductor core 701 of bar-like structure light-emitting elements 710 A to 710 D, and the metal line 732 is connected to a p-type semiconductor layer 702 . By dividing the insulative substrate 720 into a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elements 710 are placed on the divisional substrates are formed.