| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 |
| filingDate |
2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79463fc33dbb468e6d4453f02c4b2351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10eb0b651fddc1e60fec307477f2f158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eba4939a7287d995041213751c9df32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99d09086923ac85dc460728479ecf18d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ea06297585ddfef7d86138cd73a6914 |
| publicationDate |
2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013026488-A1 |
| titleOfInvention |
Epitaxial substrate and method for manufacturing epitaxial substrate |
| abstract |
Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a plurality of composition modulation layers each formed of a first composition layer made of AlN and a second composition layer made of Al x Ga 1-x N (0≦x<1) being alternately laminated. The relationship of x(1)≧x(2)≧ . . . ≧x(n−1)≧x(n) and x(1)>x(n) is satisfied, where n represents the number of laminations of each of the first and the second composition layer, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. Each of the second composition layers is formed so as to be in a coherent state relative to the first composition layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021255426-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9923061-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015372096-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3041470-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013026486-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2950331-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8680537-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3144956-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9508804-B2 |
| priorityDate |
2010-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |