Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10e8de8d43708bc714db5bb521c8d375 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06a27c07272525104cbb74c594c195ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ec51857845bfeff6accf996a5d6b167 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T3-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J47-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T3-008 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T3-00 |
filingDate |
2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af7afded16f40fc0117253004a7017c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da2fd654125a2fc1a34491414797a7e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e6a52f0cb3896e1a554284008fc4ac9 |
publicationDate |
2013-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2013020492-A1 |
titleOfInvention |
Ion chamber based neutron detectors |
abstract |
A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. Desirably, the distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10302781-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016061553-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10613237-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10302780-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11035965-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111213072-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017023684-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11630223-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10317541-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9116249-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019243011-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11768301-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10627366-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11125896-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10809397-B2 |
priorityDate |
2007-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |