| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2a9705ea5e019f667a4a322e9a243ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cdd39717b521a32e3a3fd4be0098febc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02D10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-0375
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2012-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3663ec4ca73e59ee8cf7ad7b1b9e3fce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39e086ae857ee7fee3d11a6944577c0f |
| publicationDate |
2013-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013002326-A1 |
| titleOfInvention |
Logic circuit and semiconductor device |
| abstract |
In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×10 19 (atoms/cm 3 ) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012313693-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016027812-A1 |
| priorityDate |
2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |