| abstract |
A semiconductor device includes an interlayer insulating film, a wiring formed on the interlayer insulating film so as to protrude therefrom and made of a material having copper as a main component, and a passivation film formed so as to cover the wiring. The passivation film is made of a laminated film in which a first nitride film, an intermediate film, and a second nitride film are laminated in that order from the wiring side. The intermediate film is made of an insulating material (for example, an oxide) differing from those of the first and second nitride films. |