http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012322230-A1

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filingDate 2011-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2012322230-A1
titleOfInvention Method for forming two device wafers from a single base substrate utilizing a controlled spalling process
abstract The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.
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priorityDate 2011-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 40.