| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e94e708dadc7e06262765b676d455e8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a00955d478ae3c4cf2e2a8abc797a73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5efa7133fb1830ba6edb9192d018b8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bd18a5ca33e31e9c14bbd98da687d84 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2012-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4602663694e4783fe90fbd70737e8d9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_883796114789314856b895d3287661c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ef0d834e367f956195eac47115841cd |
| publicationDate |
2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012322214-A1 |
| titleOfInvention |
Method and structure for establishing contacts in thin film transistor devices |
| abstract |
The roughness and structural height of printed metal lines is used to pin a fluid. This fluid deposits a top contact material which is connected to the bottom printed contacts through pinholes in the hydrophobic polymer layer. This results in a sandwich-like contact structure achieved in a self-aligned deposition process and having improved source-drain contact for all-additive printed circuits. In one form, the present technique is used for thin film transistor applications, but it may be applied to electrodes in general. |
| priorityDate |
2008-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |