| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36ddf54ce3d50a67c11c75ed4fec4bbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_011e3a8b9f06026bc9bfdc88b875fe08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd9b5f8009f4f2fe6962fe4063541962
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9177ce3cb6a1f391e7341291c6b0208 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2f4916146d5272df2dd42daba671844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b880d308f1536e35a93b063504aa7dae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_473e8d24c6f08155be4fcc8235022a59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2e084c3f4033544a06d96a54a845cbd |
| publicationDate |
2012-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012315745-A1 |
| titleOfInvention |
Crystalline silicon film forming method and plasma cvd apparatus |
| abstract |
A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si n H 2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015206716-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017356084-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10017853-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2020245070-B2 |
| priorityDate |
2009-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |