| abstract |
The present invention provides a method of manufacturing a semiconductor device. An insulating-separating portion, which surrounds an electrode penetrating a substrate, is filled with a stacked structure of at least two stages, including a first stage of insulating film and a second stage of insulating film. When at least one of the first and second stages of insulating films has a seam, the seam is stopped by the region in the bottom of the second stage of insulating film that does not have a seam in at least the bottom thereof, thereby increasing mechanical strength. It is possible to prevent the inner region of the insulating-separating portion from being isolated. |