| abstract |
A nonvolatile memory element may include, but is not limited to: a first electrode; a second electrode; and a resistive switching material disposed between the first electrode and the second electrode, wherein at least one of the first electrode or the second electrode includes at least one of a metal cation or metalloid cation having a valence state, oxidation state or oxidation number and wherein the resistive switching material includes at least one of a metal cation or a metalloid cation having the same valence state oxidation state or oxidation number as the at least one of a metal cation or metalloid cation of the at least one of the first electrode or the second electrode. |