http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012292784-A1

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publicationDate 2012-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2012292784-A1
titleOfInvention Semiconductor device
abstract A semiconductor device includes a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface; a through-hole formed to penetrate the semiconductor substrate from the first surface to the second surface; an insulating film formed on an inner wall of the through-hole; a barrier film formed on the inner wall of the through-hole with the insulating film interposed therebetween; and a conductive portion formed to fill the through-hole provided with the insulating film and the barrier film. A gettering site is formed in a portion of the semiconductor substrate around the through-hole at least near a side of the first surface.
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Total number of triples: 49.