| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1162078e73b0af624cf0286e37add6e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_68044b564f7a21984c71ef4afa72d441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a1263f7454314deeef6ed613c6d57822 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate |
2011-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e32c0b6416651698286e08cf1073636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e619162dadd27bb2c61dc050ba37c13c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29c6518653b2f913c76f7f850faa8ea9 |
| publicationDate |
2012-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012291861-A1 |
| titleOfInvention |
Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same |
| abstract |
A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2565056-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016322934-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812448-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140094698-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031907-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016000030-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016225929-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10230328-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140092970-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113257927-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101925928-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10340403-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2015283813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101925929-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114864729-A |
| priorityDate |
2010-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |