| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_631f44e6dc6541665342816b2711cdfc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f250135eb7f5a692b3055325ae739beb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe1e947a8178f551e7eaa6b00e6a9175 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2011-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_690589c6a1f1e259fc7686e7d31d8ef3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ee6699efc023363efb7abf45083e558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a3fc83f695bebaba7c6ea9e3ed75af2 |
| publicationDate |
2012-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012270408-A1 |
| titleOfInvention |
Manufacturing method of gate dielectric layer |
| abstract |
A manufacturing method of a gate dielectric layer that includes a nitride layer and an oxide layer is provided. A substrate is provided. A nitridation treatment is performed to form the nitride layer on the substrate. An oxidation treatment is performed subsequent to the formation of the nitride layer to form the oxide layer between the nitride layer and the substrate. |
| priorityDate |
2011-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |