| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6c09cd8246ab8acae455c9b91e2b122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14961a37873da916c8b73c3d3fb6a809
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c7041c98a692745abf1c458f493a930
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9904bf81e8a9cab7687c79acbd2f8f1b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd9768ff7907d215ade5b3e337ab303d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fdc7b634714f86d84788985485cf3e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ce75e90dc867762606d7a6f0a466fa6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9068ff7f278797df686f3e3a67695144 |
| publicationDate |
2012-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012267641-A1 |
| titleOfInvention |
Epitaxial wafer for light emitting diode, light emitting diode chip and methods for manufacturing the same |
| abstract |
An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9312444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014061660-A1 |
| priorityDate |
2009-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |