| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4f4c16b36d2dbbdfbb68a7beeda1450
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f70841a90f05b12b04bdd7f596cd316c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d3b50b88b0175ade53e203bc1836b48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf83328d853bc7476ca10212837b3a01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d62564e517982c1e5c5715e0c7cfbce5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_13c180dc339db67b964dc1c9bb7971e4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7887
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0466 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34 |
| filingDate |
2011-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2563855fdeede9bf1f5da0e59eda625c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6cd7c8cf0ab54568da36ba72bfa4844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1677b58de6588984701c95efea45b437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3213ea5a2dd587ab3e711ca09dc045ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_068a8724e090fbed9446746a6483a937 |
| publicationDate |
2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012262985-A1 |
| titleOfInvention |
Mulit-bit cell |
| abstract |
A method for forming a device is disclosed. The method includes providing a substrate prepared with a primary gate and forming a charge storage layer on the substrate over the primary gate. A secondary gate electrode layer is formed on the substrate over the charge storage layer. The charge storage and secondary gate electrode layers are patterned to form first and second secondary gates on first and second sides of the primary gate. |
| priorityDate |
2011-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |