http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012258595-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e3106ab5ce13289ef555d1cc434f262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5ac4607ed53c6b5c867bfc117b0294d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fefb6b3c890792a9b63b6c5d5601df99 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate | 2011-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd45cf92c0a977ce5aef9e9249c09014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58f4c822ac070b898d8ffe5ac54b7d40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f272263dd02c74e0578736d975e69cf |
| publicationDate | 2012-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2012258595-A1 |
| titleOfInvention | Formation of a Masking Layer on a Dielectric Region to Facilitate Formation of a Capping Layer on Electrically Conductive Regions Separated by the Dielectric Region |
| abstract | A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions the masking layer inhibits formation of capping layer material on the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive, a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742197-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9105575-B2 |
| priorityDate | 2005-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.