| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_458188d82207b334ceaa4c1cdf241a26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a4dc481f464d4542728b494b07ff1ade
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f26641a1e3354d20f19a3686a730a18 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2012-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14c23396928afbe51b3579cdef3f7895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_823f9eaff56b9bc6b0df26485955305c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d074e0836cd0e4fdbeaba7d2ee964886 |
| publicationDate |
2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012252188-A1 |
| titleOfInvention |
Plasma processing method and device isolation method |
| abstract |
A plasma processing method for use in device isolation by shallow trench isolation in which an insulating film is embedded in a trench formed in silicon and the insulating film is planarized to form a device isolation film, the method includes a plasma nitriding the silicon of an inner wall surface of the trench by using a plasma before embedding the insulating film in the trench. The plasma nitriding is performed by using a plasma of a processing gas containing a nitrogen-containing gas under conditions in which a processing pressure ranges from 1.3 Pa to 187 Pa and a ratio of a volumetric flow rate of the nitrogen-containing gas to a volumetric flow rate of the entire processing gas ranges from 1% to 80% such that a silicon nitride film is formed on the inner wall surface of the trench to have a thickness of 1 to 10 nm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887291-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017186607-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105430862-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015270407-A1 |
| priorityDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |