| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f17324358487a9259b5e29f6fba45a49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f011c681366805d53aaa804b5737ec26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33dafb5bbc2ec47ebcb7becbbe60f704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6638ac6b1020cd2c62d09d748bc1ab9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc9ee22e7be37ef31daa6ea7c1dae0ed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D495-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-488 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D495-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| filingDate |
2010-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e3d7cb21f41bdd4ec7fcb18b30d6dc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b83ca727d8e4aa4bc7b8e8c7235c14f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8c4accfdcf6470bd6724e1dc00fafa4 |
| publicationDate |
2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012248428-A1 |
| titleOfInvention |
Thienopyrazine compound and field effect transistor containing the same |
| abstract |
A thienopyrazine compound which is useful for an organic semiconductor material. An organic field effect transistor, which includes an organic semiconductor layer that is easily produced from an organic semiconductor material containing the thienopyrazine compound by a coating method or a printing method, and which exhibits high carrier mobility and high on/off current ratio; and an organic field effect transistor which has ambipolar characteristics. The thienopyrazine compound is represented by chemical formula (I): n n n n n n n n n n wherein Ar 1 and Ar 2 each represents an aryl group, and R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group; or alternatively R 1 and R 2 represent a group having a ring formed by combining R 1 and R 2 together. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889475-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8987722-B2 |
| priorityDate |
2009-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |