| abstract |
Embodiments of the invention include methods for in-situ chamber dry clean for metal deposition chambers. In one embodiment, a method for in-situ chamber dry clean after a metal deposition process includes placing a substrate in a processing chamber, performing a metal deposition process on the substrate in the processing chamber, removing the substrate from the support pedestal, and performing an in-situ cleaning process by supplying a cleaning gas containing H 2 to the processing chamber while a dummy substrate is disposed in the processing chamber |