http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012199838-A1

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filingDate 2011-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2012199838-A1
titleOfInvention Thin film transistor array panel and manufacturing method thereof
abstract A manufacturing method of a thin film transistor array panel includes: simultaneously forming a gate conductor and a first electrode on a substrate, using a non-peroxide-based etchant; forming a gate insulating layer on the gate conductor and the first electrode; forming a semiconductor, a source electrode, and a drain electrode on the gate insulating layer; forming a passivation layer on the semiconductor, the source electrode, and the drain electrode; and forming a second electrode layer on the passivation layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020177296-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014183536-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120090368-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101909139-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2717315-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136284-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11639470-B2
priorityDate 2011-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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