patent/US-2012196431-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012196431-A1

Outgoing Links

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filingDate	2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff4edd33a39905de6ec4689b6476091c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5484ad639bd5dc92f82f85a844e5ae32
publicationDate	2012-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2012196431-A1
titleOfInvention	Insulating film and semiconductor device including the same
abstract	It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2≦1.0×10 21 cm −3 .
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107742604-A
priorityDate	2008-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 50.