http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012156849-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_add759f69c57b31770cbcd359be13c57 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2011-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8707eb5bc480512f96641914cb88d7e8 |
| publicationDate | 2012-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2012156849-A1 |
| titleOfInvention | Method for fabricating semiconductor device |
| abstract | A method for fabricating a semiconductor device includes forming a storage node contact plug over a cell region of a substrate, forming a first inter-layer dielectric layer over the substrate, forming a first bit line over the first inter-layer dielectric layer in a peripheral region of the substrate, forming a second inter-layer dielectric layer over the first inter-layer dielectric layer, forming a second bit line over the second inter-layer dielectric layer, etching the second inter-layer dielectric layer to expose an upper surface of the storage node contact plug in the cell region, forming a capacitor contacting the storage node contact plug, forming a third inter-layer dielectric layer over the substrate having the capacitor formed thereon, forming a metal contact through the third inter-layer dielectric layer to contact the second bit line in the peripheral region, and forming a metal line contacting the metal contact over the third inter-layer dielectric layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015031199-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016254165-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11785763-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9805948-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437705-B2 |
| priorityDate | 2010-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.