patent/US-2012153249-A1

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filingDate	2012-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e21b16f38898573e80ec80f684a72966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ae5aff241df1b81ab4da696d40a5a65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9bd93d91fb7f6201bf040e9e39e4ee4
publicationDate	2012-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2012153249-A1
titleOfInvention	Composition of Memory Cell With Resistance-Switching Layers
abstract	A memory cell including a first electrode, a second electrode and a first resistance-switching layer located between the first and second electrodes. The first resistance-switching layer comprises hafnium silicon oxynitride.
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priorityDate	2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

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