| abstract |
A method for fabricating a semiconductor device, the method comprising: forming a metal containing film on a substrate; exposing the metal containing film to an ammonia radical in a reaction chamber; evacuating gas generated in the exposing by supplying an inert gas into the reaction chamber; and after repeating the exposing and the supplying a predetermined number of times, forming a silicon nitride film covering the metal containing film in the reaction chamber without atmospheric exposure. |