http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012142150-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_78e49a5ad773306cd4225b29f91586bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f823f036721e39c61ff0ced537273b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4ba085c72263802016148d2e7aca322 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d40f6fad1d6cc6d0db60a756c891df3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e75da34efbb5284d1736ea789479d13d |
| publicationDate | 2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2012142150-A1 |
| titleOfInvention | Method for forming metal gate and mos transistor |
| abstract | The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014191299-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111285326-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8927406-B2 |
| priorityDate | 2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.