| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_743812f9b42d94cf9006afcb62078a15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6c713d3d2ae56be5dfaf6e3089ea589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ccfc7bf2a7216121f60bbf2b3f717a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_577084c28708d07ab9e46cacf2625969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c142e57962f1e8e9a64926e72f1fd250
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d5d855121a3d7bc9356e9a8518dffe2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 |
| filingDate |
2011-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42d4c81ba9420c9ff01df31f5a928607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_274a54edab777ed6e8d69e7a45348516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b19ed6e06b2d34fa529d7be5442e00e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59ff679a4c8cf2791a9e9852e6148234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd4097d28acf0554ae89fea27bd5a893 |
| publicationDate |
2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012138991-A1 |
| titleOfInvention |
High-efficiency light-emitting device and manufacturing method thereof |
| abstract |
This invention provides a high-efficiency light-emitting device and the manufacturing method thereof The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013037831-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015340556-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021288285-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224772-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11785793-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786820-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9444005-B2 |
| priorityDate |
2005-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |