| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b5e6d4dcb0929cf64bc6d80de2d8f6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf60c50ebbcc105ad4ec6316edfa3078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c8866eec47ed946faf95065c5aa48e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2010-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e9afe3b17fb203c8b35282dcac88521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb88508da4e6a2b0ccf48911e65a41f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3405ce2e670bbea6b6584909bd956c1e |
| publicationDate |
2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012104619-A1 |
| titleOfInvention |
Sublithographic patterning employing image transfer of a controllably damaged dielectric sidewall |
| abstract |
A first low dielectric constant (low-k) dielectric material layer is lithographically patterned to form a recessed region having expose substantially vertical sidewalls, which are subsequently damaged to de-carbonize a surface portion at the sidewalls having a sublithographic width. A second low-k dielectric material layer is deposited to fill the recessed region and planarized to exposed top surfaces of the damaged low-k dielectric material portion. The damaged low-k dielectric material portion is removed selective to the first and second low-k dielectric material layers to form a trench with a sublithographic width. A portion of the pattern of the sublithographic-width trench is transferred into a metallic layer and optionally to an underlying dielectric masking material layer to define a trench with a sublithographic width, which can be employed as a template to confine the widths of via holes and line trenches to be subsequently formed in an interconnect-level dielectric material layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449871-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020135546-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019103272-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727045-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867842-B2 |
| priorityDate |
2010-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |