| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_68436c67ee8a4366ab1613789accc1d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d06c9642302cb65bf22d4f9fe2b9879f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eccc5ff86a859916321c205487989f5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4181af41be091e9e870ee2ef0ada2fb8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5813 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-227 |
| filingDate |
2011-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_485d61984e6110860515d5b79de2618e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d08f6f9e796f373372c6e62a0a349933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e92ce52b34f1757f128865605bef2820
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be0198b3525f11fbce2bac25f5c7add0 |
| publicationDate |
2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012104383-A1 |
| titleOfInvention |
Semiconductor device having zinc oxide thin film and manufacturing method thereof |
| abstract |
A semiconductor device includes a ZnO thin film. The semiconductor device comprises a substrate and a ZnO thin film. The ZnO thin film includes at least two zones with different carrier types. The current invention also discloses a manufacturing method of a semiconductor device having ZnO thin film. A ZnO thin film doped with dopant is deposited on a substrate. Thereafter, a laser irradiates on the ZnO thin film to activate the dopant in the irradiated zone of the ZnO thin film to change the carrier type. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742216-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I684256-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763129-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10304698-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107301965-A |
| priorityDate |
2010-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |