| abstract |
There is provided a light-emitting element in which the driving voltage is reduced and light extraction efficiency is improved, a method of manufacturing the light-emitting element, a lamp, electronic equipment, and a mechanical apparatus. This is achieved by using a light-emitting element ( 1 ) which includes an n-type semiconductor layer ( 12 ), a light emission layer ( 13 ), a p-type semiconductor layer ( 14 ), and a titanium oxide-based conductive film layer ( 15 ), laminated in order on one face of a substrate ( 11 ), wherein a first oxide containing an element that is any one of In, Al, and Ga and a second oxide containing either Zn or Sn are present between the p-type semiconductor layer ( 14 ) and the titanium oxide-based conductive film layer ( 15 ), and the mass ratio of the second oxide to the total of the first oxide and the second oxide is in a range of 1 to 20 mass %. |