| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47dd11e445ae162f18c7869e01dea4ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f89c3202c3c9e85c4febbd5d335fe05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_87ae13fb00e62fe341ba780b206bf481 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-024 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| filingDate |
2010-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f18dec65849a9b8cdb4820e6f177f815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48de88d30cf2ab1c0e9664cb59291f49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e60887070837f9870b4d70084e361eef |
| publicationDate |
2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012094402-A1 |
| titleOfInvention |
Method to manufacture semiconductor device with optical grating |
| abstract |
A method to manufacture an optical device with enhanced high frequency performance is disclosed. The method includes steps of: (a) forming semiconductor layers on a semiconductor substrate, (b) etching the semiconductor layers by using a mask to form a plurality of diffraction gratings, where the mask provides a plurality of periodic patterns each corresponding to respective gratings and having a specific pitch different from others, (c) forming an active layer on the etched semiconductor layers, (d) measuring a maximum optical gain of the active layer, (e) selecting one of diffraction gratings based on the measured optical gain, and (f) forming a current confinement structure aligned with the selected diffraction grating. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10756507-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017083753-A |
| priorityDate |
2010-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |