| abstract |
There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light emitting element that emits light in response to current supplied thereto is formed in at least one of the plurality of the Group 3-5 compound semiconductors, and a current limiting element that limits the current supplied to the light emitting element is formed in at least one of the plurality of the Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor in which the light emitting element is formed. |