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publicationDate 2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2012074503-A1
titleOfInvention Planar Silicide Semiconductor Structure
abstract A planar silicide structure and method of fabrication is disclosed. A FET having a silicided raised source-drain structure is formed where the height of the source-drain structures are the same as the height of the gates, simplifying the process of forming contacts on the FET. One embodiment utilizes a replacement metal gate FET and another embodiment utilizes a gate-first FET
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