| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6086677985b292239f32f3f4d9dc357b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9ca743ad0e0bcabfab2ba60d8987c048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d52149ab632cb3a147f74cdc0a988b17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bfb205480d533f1f9a92d3dbc1aafcf7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-28 |
| filingDate |
2011-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e0f45278fccf8334fc3a5a16720d5cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3de89213f2e9c84ccd658c0f4681c50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_830ef20e1206653eb45f9ab3723ea45e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2017917d3b71a852a740f5d6398daed7 |
| publicationDate |
2012-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012045589-A1 |
| titleOfInvention |
Amidate Precursors For Depositing Metal Containing Films |
| abstract |
Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015130108-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11549175-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020185618-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015093389-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355345-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10822700-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10072337-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021025059-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10480078-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9637823-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015279681-A1 |
| priorityDate |
2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |